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irfr6215pbf IRFU6215PBF hexfet ? power mosfet v dss = -150v r ds(on) = 0.295 ? i d = -13a description 12/14/04 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v -13 i d @ t c = 100c continuous drain current, v gs @ 10v -9.0 a i dm pulsed drain current -44 p d @t c = 25c power dissipation 110 w linear derating factor 0.71 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 310 mj i ar avalanche current -6.6 a e ar repetitive avalanche energy 11 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings parameter typ. max. units r jc junction-to-case ??? 1.4 r ja junction-to-ambient (pcb mount) ** ??? 50 c/w r ja junction-to-ambient ??? 110 thermal resistance d-pak t o-252aa i-pak to-251aa p-channel 175c operating temperature surface mount (irfr6215) straight lead (irfu6215) advanced process technology fast switching fully avalanche rated fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. the d-pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead version (irfu series) is for through- hole mounting applications. power dissipation levels up to 1.5 watts are possible in typical surface mount applications. pd-95080a www.kersemi.com 1 s d g lead-free
irfr/u6215pbf 2 www.kersemi.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -150 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? - 0.20 ??? v/c reference to 25c, i d = -1ma ??? ??? 0.295 v gs = -10v, i d = -6.6a ??? ??? 0.58 v gs = -10v, i d = -6.6a t j = 150c v gs(th) gate threshold voltage -2.0 ??? -4.0 v v ds = v gs , i d = -250a g fs forward transconductance 3.6 ??? ??? s v ds = -50v, i d = -6.6a ??? ??? -25 a v ds = -150v, v gs = 0v ??? ??? -250 v ds = -120v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v q g total gate charge ??? ??? 66 i d = -6.6a q gs gate-to-source charge ??? ??? 8.1 nc v ds = -120v q gd gate-to-drain ("miller") charge ??? ??? 35 v gs = -10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 14 ??? v dd = -75v t r rise time ??? 36 ??? ns i d = -6.6a t d(off) turn-off delay time ??? 53 ??? r g = 6.8 ? t f fall time ??? 37 ??? r d = 12 ?, see fig. 10 between lead, 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 860 ??? v gs = 0v c oss output capacitance ??? 220 ??? pf v ds = -25v c rss reverse transfer capacitance ??? 130 ??? ? = 1.0mhz, see fig. 5 electrical characteristics @ t j = 25c (unless otherwise specified) nh i gss l s internal source inductance ??? 7.5 ??? r ds(on) static drain-to-source on-resistance l d internal drain inductance ??? 4.5 ??? i dss drain-to-source leakage current parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? -1.6 v t j = 25c, i s = -6.6a, v gs = 0v t rr reverse recovery time ??? 160 240 ns t j = 25c, i f = -6.6a q rr reverse recoverycharge ??? 1.2 1.7 c di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics a -13 -44 notes: starting t j = 25c, l = 14mh r g = 25 ? , i as = -6.6a. (see figure 12) repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd -6.6a, di/dt -620a/s, v dd v (br)dss , t j 175c uses irf6215 data and test conditions pulse width 300s; duty cycle 2% this is applied for i-pak, l s of d-pak is measured between lead and center of die contact ? s d g s d g
irfr/u6215pbf www.kersemi.com 3 fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics fig 2. typical output characteristics 1 10 100 11010 0 d ds 20s pulse width t = 25c c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 1 10 100 11010 0 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20s pulse width t = 175c c 1 10 100 45678910 t = 25c j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) t = 175c j v = -50v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -11a d
irfr/u6215pbf 4 www.kersemi.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 20 0 20406080 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) for test circuit see figure 13 i = -6.6a v = -120v v = -75v v = -30v d ds ds ds 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 t = 25c j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) t = 175c j 1 10 100 1 10 100 100 0 operation in this area limited by r ds(on) 10ms a -i , drain current (a) -v , drain-to-source voltage (v) ds d 10s 100s 1ms t = 25c t = 175c single pulse c j 0 400 800 1200 1600 2000 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss
irfr/u6215pbf www.kersemi.com 5 fig 9. maximum drain current vs. case temperature fig 11. maximum effective transient thermal impedance, junction-to-case fig 10a. switching time test circuit fig 10b. switching time waveforms
1 0.1 %
+ - v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) a thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c
irfr/u6215pbf 6 www.kersemi.com fig 12c. maximum avalanche energy vs. drain current 0 200 400 600 800 25 50 75 100 125 150 17 5 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) i top -2.7a -4.7a bottom -6.6a d
q g q gs q gd v g charge d.u.t. v d s i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -

t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v
irfr/u6215pbf www.kersemi.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer * reverse polarity of d.u.t for p-channel
irfr/u6215pbf 8 www.kersemi.com

12 in the assembly line "a" as s emb led on ww 16, 1999 example: with assembly this is an irfr120 lot code 1234 year 9 = 199 9 dat e code we e k 16 part number logo international rectifier assembly lot code 916a ir fu 120 34 year 9 = 1999 dat e code or p = d e s i gn at e s l e ad- f r e e product (opt ional) note: "p" in assembly line pos ition i ndi cates "l ead- f r ee" 12 34 week 16 a = assembly site code part number irf u120 line a logo lot code assembly international rectifier
irfr/u6215pbf www.kersemi.com 9

as s e mb l y example: wi t h as s e mb l y this is an irfu120 ye ar 9 = 199 9 dat e code line a week 19 in the assembly line "a" as s e mb led on ww 19, 1999 lot code 5678 part number 56 irfu120 international logo rectifier lot code 919a 78 note: "p" in as s embly line pos i ti on i ndi cates "l ead- f r ee" 56 78 assembly lot code rectifier logo international irf u 120 part number wee k 19 dat e code ye ar 9 = 1999 a = assembly site code p = designates lead-free product (optional)
irfr/u6215pbf 10 www.kersemi.com

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl n otes : 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters ( inches ). 3 . outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch

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